Invention Grant
- Patent Title: Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same
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Application No.: US15556889Application Date: 2016-04-12
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Publication No.: US10403348B2Publication Date: 2019-09-03
- Inventor: Anquan Jiang , Wenping Geng
- Applicant: Fudan University
- Applicant Address: CN Shanghai
- Assignee: Fudan University
- Current Assignee: Fudan University
- Current Assignee Address: CN Shanghai
- Agency: Warner Norcross & Judd LLP
- International Application: PCT/CN2016/079068 WO 20160412
- International Announcement: WO2017/177376 WO 20171019
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L27/11502 ; H01L49/02
Abstract:
Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
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