- Patent Title: Non-volatile memory apparatus including voltage clamping circuit
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Application No.: US15814625Application Date: 2017-11-16
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Publication No.: US10403356B2Publication Date: 2019-09-03
- Inventor: Min Chul Shin , Ho Seok Em
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0163803 20161202
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C7/12
Abstract:
A memory apparatus may be provided. The memory apparatus may include a global bit line configured to receive a drift current. A voltage clamping circuit configured to limit a voltage level of the global bit line.
Public/Granted literature
- US20180158524A1 NON-VOLATILE MEMORY APPARATUS INCLUDING VOLTAGE CLAMPING CIRCUIT Public/Granted day:2018-06-07
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