A nonvolatile memory includes a plurality of memory blocks, a plurality of source drivers corresponding to the plurality of memory blocks, a plurality of pass transistor groups connected between the plurality of source drivers and the plurality of memory blocks, a plurality of block pass transistors connected between a plurality of block word lines and the plurality of pass transistor groups, a plurality of block decoders corresponding to a plurality of memory block groups respectively, and a block pass transistor decoder configured to control voltages of block select lines connected to the plurality of block pass transistors. The plurality of memory blocks are divided into the plurality of memory block groups. Each block decoder is configured to control voltages of block word lines, among the plurality of block word lines, connected to at least two memory blocks of a corresponding memory block group in common.