Invention Grant
- Patent Title: Energy filter for processing a power semiconductor device
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Application No.: US16299198Application Date: 2019-03-12
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Publication No.: US10403468B2Publication Date: 2019-09-03
- Inventor: Roland Rupp , Andre Brockmeier
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102016110429 20160606
- Main IPC: H01J37/05
- IPC: H01J37/05 ; H01J37/317
Abstract:
A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.
Public/Granted literature
- US20190214219A1 ENERGY FILTER FOR PROCESSING A POWER SEMICONDUCTOR DEVICE Public/Granted day:2019-07-11
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