Implementations of a method of singulating a plurality of die may include: providing a semiconductor wafer including a plurality of die located on a first side of the semiconductor wafer where the plurality of die include a desired thickness. The method may include etching a plurality of trenches into the semiconductor wafer only from the first side of the semiconductor wafer where the plurality of trenches is located adjacent to a perimeter of the plurality of die. A depth of the plurality of trenches may be greater than the desired thickness of the plurality of die. The method may also include mounting the first side of the semiconductor wafer to a backgrinding tape. The method may also include thinning a second side of the semiconductor wafer to a predetermined distance to the depth of the plurality of trenches to singulate the plurality of die.