Invention Grant
- Patent Title: Three dimensional integrated circuit having redundant through silicon via base on rotatable cube
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Application No.: US15894787Application Date: 2018-02-12
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Publication No.: US10403555B2Publication Date: 2019-09-03
- Inventor: Sungho Kang , Minho Cheong
- Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Applicant Address: KR Seoul
- Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee Address: KR Seoul
- Priority: KR10-2017-0171057 20171213
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/66 ; H01L23/48 ; H01L25/065 ; H01L23/538 ; H01L23/52 ; H01L23/522

Abstract:
Exemplary embodiments of the present invention provides a three dimensional integrated circuit and a method for repairing the three dimensional integrated circuit which dispose a signal through silicon via (STSV) or a redundant through silicon via (RTSV) for each basic unit in which a through silicon via (TSV) and a switch are combined and connect repair paths among the basic units to efficiently repair a defective through silicon via which exists in a dense area by using a small number of redundant resources.
Public/Granted literature
- US20190181061A1 THREE DIMENSIONAL INTEGRATED CIRCUIT HAVING REDUNDANT THROUGH SILICON VIA BASE ON ROTATABLE CUBE Public/Granted day:2019-06-13
Information query
IPC分类: