Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
-
Application No.: US15802131Application Date: 2017-11-02
-
Publication No.: US10403579B2Publication Date: 2019-09-03
- Inventor: Han Ul Lee , Jin Su Kim , Young Gwan Ko
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0085041 20170704
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/48 ; H01L21/683 ; H01L23/31 ; H01L23/00 ; H01L21/56

Abstract:
A semiconductor device includes a semiconductor chip having an active surface having connection pads disposed thereon; an encapsulant encapsulating at least portions of the semiconductor chip, a connection member disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads, a passivation layer disposed on the connection member, and an under bump metallurgy (UBM) layer embedded in the passivation layer and electrically connected to the redistribution layer of the connection member. The UBM layer includes a UBM pad embedded in the passivation layer and having a recess portion, and a UBM via penetrating through a portion of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other.
Public/Granted literature
- US20190013276A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-01-10
Information query
IPC分类: