Embodiments of the present invention provide improved methods and structures for fabrication of capacitor-less DRAM devices, sometimes referred to as ZRAM devices. A channel is formed in a fin-type field effect transistor (finFET) that is comprised of a finned channel portion and a convex channel portion. The finned channel portion may be comprised of a first semiconductor material and the convex channel portion may be comprised of a second, different semiconductor material. In embodiments, a metal gate is disposed around the elongated surface of the channel region, but is not disposed on the short surface of the channel region. A first spacer is disposed adjacent to the gate and in direct physical contact with the short surface of the channel region, and a second spacer is disposed adjacent to the first spacer.