Invention Grant
- Patent Title: Switch device and storage unit
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Application No.: US15559571Application Date: 2016-03-16
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Publication No.: US10403680B2Publication Date: 2019-09-03
- Inventor: Kazuhiro Ohba , Hiroaki Sei , Seiji Nonoguchi , Takeyuki Sone , Minoru Ikarashi
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2015-073053 20150331
- International Application: PCT/JP2016/058389 WO 20160316
- International Announcement: WO2016/158429 WO 20161006
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L27/24 ; H01L27/105 ; H01L45/00 ; H01L27/22

Abstract:
A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.
Public/Granted literature
- US20180047784A1 SWITCH DEVICE AND STORAGE UNIT Public/Granted day:2018-02-15
Information query
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