Invention Grant
- Patent Title: Oxide semiconductor transistor
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Application No.: US16100145Application Date: 2018-08-09
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Publication No.: US10403700B2Publication Date: 2019-09-03
- Inventor: Sakae Tanaka
- Applicant: MIKUNI ELECTRON CORPORATION
- Applicant Address: JP Saitama
- Assignee: MIKUNI ELECTRON CORPORATION
- Current Assignee: MIKUNI ELECTRON CORPORATION
- Current Assignee Address: JP Saitama
- Agency: Pearne & Gordon LLP
- Priority: JP2017-107278 20170531
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/32 ; H01L29/786 ; H01L29/423 ; H01L51/52 ; H01L29/66 ; H01L27/12 ; H01L51/50 ; H01L51/56

Abstract:
A display device includes a driving transistor and an organic EL element. The driving transistor includes an oxide semiconductor layer; a first gate electrode that region overlapping the oxide semiconductor layer; a first insulting layer between the first gate electrode and the oxide semiconductor layer; a second gate electrode that includes a region overlapping the oxide semiconductor layer and the first gate electrode; a second insulating layer between the second gate electrode and the oxide semiconductor layer; and a first and a second transparent conductive layer that are provided between the oxide semiconductor layer and the first insulating layer and each include a region contacting the oxide semiconductor layer. The organic EL element includes a first electrode; a second electrode; a light emitting layer between the first electrode and the second electrode; and an electron transfer layer between the light emitting layer and the first electrode.
Public/Granted literature
- US20190006451A1 OXIDE SEMICONDUCTOR TRANSISTOR Public/Granted day:2019-01-03
Information query
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