Invention Grant
- Patent Title: NAND flash memory with vertical cell stack structure and method for manufacturing same
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Application No.: US13803085Application Date: 2013-03-14
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Publication No.: US10403766B2Publication Date: 2019-09-03
- Inventor: Hyoung Seub Rhie
- Applicant: Conversant Intellectual Property Management Incorporated
- Applicant Address: CA Ottawa
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa
- Agency: Conversant IP Management Inc.
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L27/11573 ; H01L27/11582 ; G11C11/56 ; G11C16/04
Abstract:
Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.
Public/Granted literature
- US20140151774A1 NAND FLASH MEMORY WITH VERTICAL CELL STACK STRUCTURE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2014-06-05
Information query
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