Invention Grant
- Patent Title: Cost-efficient high power PECVD deposition apparatus for solar cells
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Application No.: US14717482Application Date: 2015-05-20
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Publication No.: US10403779B2Publication Date: 2019-09-03
- Inventor: Tze-Chiang Chen , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L31/077
- IPC: H01L31/077 ; C23C16/50 ; H01L31/20 ; H01L21/02 ; C23C16/02 ; H01L31/0216 ; H01L31/0368 ; H01L31/0376 ; H01L31/0392 ; C23C16/455 ; C23C16/515 ; H01L31/0224 ; H01L31/065 ; H01L31/18 ; H01L31/056
Abstract:
A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
Public/Granted literature
- US20150255650A1 COST-EFFICIENT HIGH POWER PECVD DEPOSITION FOR SOLAR CELLS Public/Granted day:2015-09-10
Information query
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