Invention Grant
- Patent Title: Photoconductive semiconductor switch and method for manufacturing the same
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Application No.: US15532980Application Date: 2015-04-29
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Publication No.: US10403780B2Publication Date: 2019-09-03
- Inventor: Jae Hyung Jang
- Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Gwangju
- Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Gwangju
- Agency: Womble Bond Dickinson (US) LLP
- Agent Joseph Bach, Esq.
- Priority: KR10-2014-0170566 20141202
- International Application: PCT/KR2015/004289 WO 20150429
- International Announcement: WO2016/088952 WO 20160609
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L27/14 ; H01L31/0304 ; H01L31/18 ; H01L31/0352 ; H01L31/109 ; H03K17/78

Abstract:
There is provided a photoconductive semiconductor switch device comprising: a semiconductor substrate configured to generate electrons and holes using incident light thereto; at least one pair of conductive layers disposed on the semiconductor substrate, wherein one pair of the conductive layers consists of first and second conductive layers spaced apart from each other, wherein each of the first and second conductive layers contains abundant electrical carriers to have a low resistance; and first and second electrodes disposed on at least partially on the first and second conductive layers respectively. In this way, the application of the photoconductive semiconductor switch device may be widened.
Public/Granted literature
- US20180053872A1 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-02-22
Information query
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