Invention Grant
- Patent Title: Method of cleaning and method of plasma processing
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Application No.: US15566384Application Date: 2016-05-02
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Publication No.: US10403814B2Publication Date: 2019-09-03
- Inventor: Takuya Kubo , Song yun Kang , Keiichi Shimoda , Tetsuya Ohishi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2015-098867 20150514
- International Application: PCT/JP2016/063605 WO 20160502
- International Announcement: WO2016/181893 WO 20161117
- Main IPC: B08B5/00
- IPC: B08B5/00 ; C23F1/02 ; H01J37/32 ; C23F1/08 ; H01L43/12 ; G11C11/16 ; H01F10/32 ; H01F41/34 ; H01L21/67 ; H01L21/66 ; H01L27/22 ; H01L43/02 ; G11B5/84 ; H01L21/683 ; H01L43/10
Abstract:
A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
Public/Granted literature
- US20180301622A1 METHOD OF CLEANING AND METHOD OF PLASMA PROCESSING Public/Granted day:2018-10-18
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