Invention Grant
- Patent Title: Semiconductor device and dielectric film
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Application No.: US14844863Application Date: 2015-09-03
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Publication No.: US10403815B2Publication Date: 2019-09-03
- Inventor: Tsunehiro Ino
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-140431 20130704
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L29/78 ; H01L27/11507 ; H01L49/02 ; G11C11/22 ; H01L27/1159
Abstract:
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric film or a ferrielectric film provided between the first conductive layer and the second conductive layer, the ferroelectric film or the ferrielectric film including hafnium oxide containing at least one first element selected from Zn, Mg, Mn, Nb, Sc, Fe, Cr, Co, In, Li and N.
Public/Granted literature
- US20160005961A1 SEMICONDUCTOR DEVICE AND DIELECTRIC FILM Public/Granted day:2016-01-07
Information query
IPC分类:
