Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US15828639Application Date: 2017-12-01
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Publication No.: US10404238B2Publication Date: 2019-09-03
- Inventor: Young Hoon Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0049739 20170418
- Main IPC: H03K23/00
- IPC: H03K23/00 ; H03K3/027 ; H03K5/151 ; H03K5/1252 ; H03K3/012 ; H03K3/356 ; H03K19/0175

Abstract:
A semiconductor apparatus includes a pulse generation circuit which generates a pulse signal in response to a clock, and an amplification circuit which generates an output signal in response to an input signal, the clock, and the pulse signal, wherein the amplification circuit voltage is configured to amplify a voltage level difference between a pair of latch input nodes.
Public/Granted literature
- US10439598B2 Semiconductor apparatus Public/Granted day:2019-10-08
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