Invention Grant
- Patent Title: Reducing back reflection in a photodiode
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Application No.: US15864714Application Date: 2018-01-08
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Publication No.: US10409005B2Publication Date: 2019-09-10
- Inventor: Saeed Fathololoumi , Yang Liu , Yaojia Chen
- Applicant: Elenion Technologies, LLC
- Applicant Address: US NY New York
- Assignee: Elenion Technologies, LLC
- Current Assignee: Elenion Technologies, LLC
- Current Assignee Address: US NY New York
- Agency: Stratford Managers Corporation
- Main IPC: H01L31/18
- IPC: H01L31/18 ; G02B6/32 ; G02B6/12 ; H01L31/0232

Abstract:
The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.
Public/Granted literature
- US20190212498A1 REDUCING BACK REFLECTION IN A PHOTODIODE Public/Granted day:2019-07-11
Information query
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