According to one embodiment, a semiconductor memory device includes a memory string including first and second selection transistors, a first transistor, and first and second memory cell transistors, first and second selection gate lines, first to third word lines, and a row decoder. A write operation includes a first mode to write one-bit data and a second mode to write two-bit data. In a case of writing the one-bit data to the first memory cell transistor in the first mode, the row decoder applies a first voltage to the first word line. In a case of writing the two-bit data to the first memory cell transistor in the second mode, the row decoder applies, to the first word line, a second voltage that is higher than the first voltage.