Invention Grant
- Patent Title: Method for processing the LEF diagram of a layout
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Application No.: US15609490Application Date: 2017-05-31
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Publication No.: US10410356B2Publication Date: 2019-09-10
- Inventor: Xingzhou Zhang
- Applicant: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201710004605 20170104
- Main IPC: G06T7/187
- IPC: G06T7/187 ; G06F17/50
Abstract:
A method for processing the Library Exchange Format (LEF) diagram of a layout includes the following steps: Step 1, breaking the LEF diagram into multiple rectangular segments; Step 2, numbering all rectangular segments; and Step 3, combining rectangular segments to obtain a larger rectangular segment and replacing corresponding uncombined rectangular segments with the larger combined rectangular segment. The method reduces the data size of the LEF file and increase the data transmission efficiency of the LEF file.
Public/Granted literature
- US20180189952A1 METHOD FOR PROCESSING THE LEF DIAGRAM OF A LAYOUT Public/Granted day:2018-07-05
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