A non-volatile memory includes a sense amplifier, a switching element and a power switching circuit. A first sub-cell is connected with a word line, a bit line and a source line. A second sub-cell is connected with the word line, an inverted bit line and an inverted source line. During a read cycle, an activation period of the word line contains a first period and a second period. In the first period, the first sub-cell generates a first read current to a first current path, and the second sub-cell generates a second read current to a second current path. The first current path and the second current path are controlled to be opened according to the correlation of the first read current and the second read current.