An address decoder and a semiconductor memory device including the same are disclosed, which relate to a technology for a decoding circuit configured to decode a column address. The address decoder includes a pre-decoder and a column decoder. The pre-decoder divides a plurality of pre-decoding signals into at least one column address group by decoding column addresses, outputs the pre-decoding signals for each group, and outputs a second pre-decoding signal group which is an inverted signal of a first pre-decoding signal group from among the plurality of pre-decoding signals. The column decoder outputs column selection signals by decoding the plurality of pre-decoding signals in a manner that operation of a metal oxide semiconductor (MOS) transistor is controlled by the first pre-decoding signal group and the second pre-decoding signal group.