- Patent Title: Sense path circuitry suitable for magnetic tunnel junction memories
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Application No.: US15673468Application Date: 2017-08-10
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Publication No.: US10410705B2Publication Date: 2019-09-10
- Inventor: Bruce L. Morton , Michael A. Sadd
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C14/00 ; G11C7/06

Abstract:
A memory includes a first memory cell; and a second memory cell. A selectable current path is coupled between the first memory cell and the second memory cell. The selectable current path includes a first transistor. A first amplifier is coupled in a first feedback arrangement between the first memory cell and the first transistor. During a read operation of the first memory cell, a current through the first memory cell is substantially equal to a current through the second memory cell. The memory cell may include a magnetic tunnel junction (MTJ).
Public/Granted literature
- US20170337960A1 SENSE PATH CIRCUITRY SUITABLE FOR MAGNETIC TUNNEL JUNCTION MEMORIES Public/Granted day:2017-11-23
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