Multi-level cell (MLC) static random access memory (SRAM) (MLC SRAM) cells configured to perform multiplication operations are disclosed. In one aspect, an MLC SRAM cell includes SRAM bit cells, wherein data values stored in SRAM bit cells correspond to a multiple-bit value stored in the MLC SRAM cell that serves as first operand in multiplication operation. Voltage applied to read bit line is applied to each SRAM bit cell, wherein the voltage is an analog representation of a multiple-bit value that serves as a second operand in the multiplication operation. For each SRAM bit cell, if a particular binary data value is stored, a current correlating to the voltage of the read bit line is added to a current sum line. A magnitude of current on the current sum line is an analog representation of a multiple-bit product of the first operand multiplied by the second operand.