The instant disclosure provides a thin film capacitor and a method of manufacturing the same. The method includes the following steps: placing a carrier substrate on a processing machine including at least one processing unit, and the at least one processing unit having a metal-layer forming module and an insulation-layer forming module that are arranged along a planar production line; forming a plurality of metal layers by the metal-layer forming module of the at least one processing unit, forming a plurality of insulation layers by the insulation-layer forming module of the at least one processing unit, and the metal layers and the insulation layers being alternately stacked on the carrier substrate to form a multilayer stacked structure; and then forming two terminal electrode structures to respectively enclose two opposite side end portions of the multilayer stacked structure.