Invention Grant
- Patent Title: Thin film capacitor and method of manufacturing the same
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Application No.: US15404357Application Date: 2017-01-12
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Publication No.: US10410793B2Publication Date: 2019-09-10
- Inventor: Seung Mo Lim , Hyun Ho Shin , Sang Jong Lee , Yun Sung Kang , Woong Do Jung , Sung Sun Kim
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2016-0061227 20160519
- Main IPC: H01G4/33
- IPC: H01G4/33 ; H01G4/236 ; H01G4/232 ; H01G4/30 ; H01G4/012 ; H05K1/16

Abstract:
A thin film capacitor includes: a body formed by alternately stacking first and second electrode layers, with dielectric layers therebetween on a substrate. A plurality of first vias are disposed in the body and electrically connected to the first electrode layers. A plurality of second vias are disposed in the body, electrically connected to the second electrode layers, and disposed alternately with the first vias. A first connection electrode is disposed on an upper surface of the body and connected to the plurality of first vias, a second connection electrode is disposed on the upper surface of the body and connected to the plurality of second vias, and first and second electrode pads are disposed on the first and second connection electrodes, respectively, and formed to not overlap the plurality of first and second vias.
Public/Granted literature
- US20170338039A1 THIN FILM CAPACITOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-11-23
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