Invention Grant
- Patent Title: Method of semiconductor wafer bonding and system thereof
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Application No.: US15356368Application Date: 2016-11-18
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Publication No.: US10410892B2Publication Date: 2019-09-10
- Inventor: Kuan-Liang Lu , Xin-Hua Huang , Yeur-Luen Tu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/00 ; H01L21/67 ; H01L25/065 ; H01L23/544 ; H01L21/66

Abstract:
A method of semiconductor wafer bonding and system thereof are proposed. A first alignment mark of a first semiconductor wafer is aligned with a second alignment mark of a second semiconductor wafer. A partial attachment is performed between the first semiconductor wafer and the second semiconductor wafer. A scanning is performed along a direction substantially parallel to a surface of the first semiconductor wafer. It is determined if a bonding defect of the partially attached first semiconductor wafer and the second semiconductor wafer exists.
Public/Granted literature
- US20180144999A1 METHOD OF SEMICONDUCTOR WAFER BONDING AND SYSTEM THEREOF Public/Granted day:2018-05-24
Information query
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