Invention Grant
- Patent Title: Replacement metal gate patterning for nanosheet devices
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Application No.: US15602225Application Date: 2017-05-23
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Publication No.: US10410933B2Publication Date: 2019-09-10
- Inventor: Ruilong Xie , Chanro Park , Min Gyu Sung , Hoon Kim , Hui Zang , Guowei Xu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/8238 ; H01L29/775 ; H01L29/66 ; H01L27/092 ; H01L29/78 ; B82Y10/00 ; H01L29/40 ; H01L29/423 ; H01L29/06 ; H01L21/02
Abstract:
This disclosure relates to a method of replacement metal gate patterning for nanosheet devices including: forming a first and a second nanosheet stack on a substrate, the first and the second nanosheet stacks being adjacent to each other and each including vertically adjacent nanosheets separated by a distance; depositing a first metal surrounding the first nanosheet stack and a second portion of the first metal surrounding the second nanosheet stack; forming an isolation region between the first nanosheet stack and the second nanosheet stack; removing the second portion of the first metal surrounding the second nanosheet stack with an etching process, the isolation region preventing the etching process from reaching the first portion of the first metal and thereby preventing removal of the first portion of the first metal; and depositing a second metal surrounding each of the nanosheets of the second nanosheet stack.
Public/Granted literature
- US20180342427A1 REPLACEMENT METAL GATE PATTERNING FOR NANOSHEET DEVICES Public/Granted day:2018-11-29
Information query
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