Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15554706Application Date: 2016-02-03
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Publication No.: US10410945B2Publication Date: 2019-09-10
- Inventor: Akitoyo Konno
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2015-058918 20150323
- International Application: PCT/JP2016/053121 WO 20160203
- International Announcement: WO2016/152258 WO 20160929
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L23/48 ; H01L25/07 ; H01L25/18 ; H01L23/00 ; H01L23/373

Abstract:
Provided is a semiconductor device with high reliability. In order to solve the above problems, according to the present invention, the semiconductor device includes a heat dissipating substrate, an insulating substrate arranged on the heat dissipating substrate and having a wiring layer, a plurality of semiconductor elements arranged on the insulating substrate, a conductive block electrically connected to a front surface electrode of the semiconductor element, and a terminal electrode, in which the conductive block has a convex portion, and the convex portion is bonded to the insulating substrate.
Public/Granted literature
- US20180240728A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-08-23
Information query
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