- Patent Title: Microelectronic devices designed with high frequency communication devices including compound semiconductor devices integrated on an inter die fabric on package
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Application No.: US15773152Application Date: 2015-12-22
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Publication No.: US10410983B2Publication Date: 2019-09-10
- Inventor: Telesphor Kamgaing , Georgios C. Dogiamis , Vijay K. Nair
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2015/000486 WO 20151222
- International Announcement: WO2017/111865 WO 20170629
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/66 ; H01L23/538 ; H01L25/10 ; H01L23/552 ; H01L25/18 ; H01Q1/38 ; H01Q1/24
Abstract:
Embodiments of the invention include a microelectronic device that includes an overmolded component having a first die with a silicon based substrate. A second die is coupled to the first die with the second die being formed with compound semiconductor materials in a different substrate. A substrate is coupled to the first die. The substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.
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