An electronic device having a semiconductor memory device is provided. The semiconductor memory device may include a lower interlayer insulating layer having a hole; an upper interlayer insulating layer disposed on the lower interlayer insulating layer; and a memory cell stack including a lower element and an upper element, the lower element being confined to the hole of the lower interlayer insulating layer, the upper element being surrounded by the upper interlayer insulating layer. The lower element may include a lower electrode and a selection element pattern disposed on the lower electrode. The upper element may include a memory pattern disposed on the selection element pattern and an upper electrode disposed on the memory pattern.