A semiconductor storage device includes a global bit line extending in a horizontal direction, a select transistor provided on the global bit line and including a first terminal connected to the global bit line, a bit line provided on the select transistor, extending in a vertical direction, and connected to a second terminal of the select transistor, a plurality of word lines and insulating layers that are stacked alternately in a vertical direction, a first variable resistance layer between one of the plurality of word lines and a first side surface of the bit line, a plurality of dummy word lines and insulating layers that are stacked alternately in the vertical direction and disposed at the same level as the plurality of word lines, and a second variable resistance layer between the plurality of dummy word lines and a second side surface of the bit line.