Invention Grant
- Patent Title: Semiconductor device including a recessed insulation region and fabrication method thereof
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Application No.: US15613813Application Date: 2017-06-05
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Publication No.: US10411115B2Publication Date: 2019-09-10
- Inventor: Dae-Sub Jung , Lei Fang , Guang Li Yang , De Yan Chen
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201610407516 20160612
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/027 ; H01L21/266 ; H01L21/3065 ; H01L21/308 ; H01L21/762 ; H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/10
Abstract:
The present disclosure provides a method for forming a semiconductor device, including: forming a mask layer over a substrate, the mask layer containing an opening, exposing a surface portion of the substrate to form an exposed surface portion of the substrate; forming an insulation structure between the mask layer and the substrate, and in the opening; performing a thinning process on the insulation structure exposed by the opening to form a recess region on a top of the insulation structure; and forming a gate electrode over the insulation structure and covering a portion of the recess region.
Public/Granted literature
- US20170271482A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2017-09-21
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