Invention Grant
- Patent Title: Semiconductor component with protrusion propagation body and corresponding methods of manufacture
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Application No.: US15899127Application Date: 2018-02-19
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Publication No.: US10411124B2Publication Date: 2019-09-10
- Inventor: Chan Kyung Choi , Mihir Tungare , Peter Wook Kim
- Applicant: Infineon Technologies Americas Corp.
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/778 ; H01L29/10 ; H01L29/20 ; H01L29/205 ; H01L21/02
Abstract:
A semiconductor structure includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a transition body over the III-Nitride intermediate stack, a III-Nitride buffer layer situated over the transition body, and a III-Nitride device fabricated over the group III-V buffer layer. The protrusion propagation body includes at least a protrusion generating layer and two or more protrusion spreading multilayers.
Public/Granted literature
- US20180175183A1 Semiconductor Component with Protrusion Propagation Body and Corresponding Methods of Manufacture Public/Granted day:2018-06-21
Information query
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