Invention Grant
- Patent Title: Semiconductor device having a first through contact structure in ohmic contact with the gate electrode
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Application No.: US16153037Application Date: 2018-10-05
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Publication No.: US10411126B2Publication Date: 2019-09-10
- Inventor: Andreas Riegler , Christian Fachmann , Gabor Mezoesi , Hans Weber
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L21/78 ; H01L23/495 ; H01L29/10 ; H01L29/06 ; H01L29/66 ; H01L21/265 ; H01L21/266 ; H01L21/324 ; H01L21/225 ; H01L21/304 ; H01L23/31
Abstract:
A semiconductor device includes an electrically conductive lead frame which includes a die pad and a plurality of electrically conductive leads, each of the leads in the plurality being spaced apart from the die pad. The semiconductor device further includes first and second integrated switching devices mounted on the die pad, each of the first and second integrated switching devices include electrically conductive gate, source and drain terminals. The source terminal of the first integrated switching device is disposed on a rear surface of the first integrated switching device that faces and electrically connects with the die pad. The drain terminal of the second integrated switching device is disposed on a rear surface of the second integrated switching device that faces and electrically connects with the die pad.
Public/Granted literature
- US20190051742A1 Field-Effect Semiconductor Device and a Manufacturing Method Therefor Public/Granted day:2019-02-14
Information query
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