Invention Grant
- Patent Title: Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic device
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Application No.: US15878813Application Date: 2018-01-24
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Publication No.: US10411143B2Publication Date: 2019-09-10
- Inventor: Naoyuki Sato
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2011-012818 20110125
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L27/146

Abstract:
A solid-state imaging element including: a sensor substrate in which a photoelectric conversion section is arranged and formed; a circuit substrate in which a circuit for driving the photoelectric conversion section is formed, the circuit substrate being laminated to the sensor substrate; a sensor side electrode drawn out to a surface of the sensor substrate on a side of the circuit substrate and formed as one of a projection electrode and a depression electrode; and a circuit side electrode drawn out to a surface of the circuit substrate on a side of the sensor substrate, formed as one of the depression electrode and the projection electrode, and joined to the sensor side electrode in a state of the circuit side electrode and the sensor side electrode being fitted together.
Public/Granted literature
- US20180151757A1 SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE Public/Granted day:2018-05-31
Information query
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