Invention Grant
- Patent Title: RAMO4 substrate and nitride semiconductor apparatus
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Application No.: US15984801Application Date: 2018-05-21
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Publication No.: US10411154B2Publication Date: 2019-09-10
- Inventor: Akio Ueta
- Applicant: PANASONIC CORPORATION
- Applicant Address: JP Osaka
- Assignee: PANASONIC CORPORATION
- Current Assignee: PANASONIC CORPORATION
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-102862 20170524
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02 ; H01S5/22 ; H01L29/20 ; C30B29/22

Abstract:
An RAMO4 substrate including a single crystal represented by a general formula RAMO4, wherein R represents one or more trivalent elements selected from a group consisting of Sc, In, Y, and lanthanide elements, A represents one or more trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd, in which a main plane of the RAMO4 substrate has an off-angle a tilted θa° with respect to an M-axis direction from a C-plane and 0.05°≤|θa|≤0.8° is satisfied.
Public/Granted literature
- US20180342644A1 RAMO4 SUBSTRATE AND NITRIDE SEMICONDUCTOR APPARATUS Public/Granted day:2018-11-29
Information query
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