A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer. The omnidirectional reflector structure is formed on the second surface of the light-emitting epitaxial laminated layer, including: a transparent dielectric layer on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer and covering side walls of the conductive holes; a second transparent adhesive layer on one side surface of the first transparent adhesive layer distal from the transparent dielectric layer; and a metal reflective layer on one side of the second transparent adhesive layer distal from the first transparent adhesive layer.