Invention Grant
- Patent Title: Phase change material for phase change memory and preparation method therefor
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Application No.: US15739858Application Date: 2016-08-23
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Publication No.: US10411187B2Publication Date: 2019-09-10
- Inventor: Feng Rao , Zhitang Song , Keyuan Ding , Yong Wang
- Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Changning District, Shanghai
- Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCE
- Current Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCE
- Current Assignee Address: CN Changning District, Shanghai
- Agency: Global IP Services
- Agent Tianhua Gu
- Priority: CN201510697470 20151023
- International Application: PCT/CN2016/096334 WO 20160823
- International Announcement: WO2017/067314 WO 20170427
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00
Abstract:
A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of Sc100-x-y-zGexSbyTez, wherein 0≤x≤60, 0≤y≤90, 0
Public/Granted literature
- US20180315921A1 PAHSE CHANG MATERIAL FOR PHASE CHANG MEMORY AND PREPARATION METHOD THEREFOR Public/Granted day:2018-11-01
Information query
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