Invention Grant
- Patent Title: Semiconductor structure comprising a tensilely stressed suspended membrane including an optical cavity
-
Application No.: US16110157Application Date: 2018-08-23
-
Publication No.: US10411434B2Publication Date: 2019-09-10
- Inventor: Vincent Reboud , Salim Boutami
- Applicant: Commissariat a l'energie atomique et aux energies alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1757815 20170823
- Main IPC: H01S5/065
- IPC: H01S5/065 ; H01S5/125 ; H01S5/026 ; G02B6/10 ; G02B6/122 ; G02B6/12

Abstract:
The invention relates to a semiconductor structure, including:a semiconductor layer, including a membrane suspended above a carrier layer, the suspended membrane being formed of a central section, which is tensilely stressed and of a plurality of tensioning arms; andleast one optical cavity, bounded by two optical reflectors, which are placed in the lateral sections on either side of the central section;wherein:the central section is designed to transmit in the direction of the optical reflectors at least one uneven-order mode; andeach of said optical reflectors is formed of two lateral half-reflectors, which are arranged on either side of a longitudinal axis of the lateral section, so as to at least partially reflect said uneven-order mode.
Public/Granted literature
- US20190067904A1 SEMICONDUCTOR STRUCTURE COMPRISING A TENSILELY STRESSED SUSPENDED MEMBRANE INCLUDING AN OPTICAL CAVITY Public/Granted day:2019-02-28
Information query