Invention Grant
- Patent Title: Ultra-low voltage two-stage ring voltage-controlled oscillator applied to chip circuit
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Application No.: US15944811Application Date: 2018-04-04
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Publication No.: US10411679B2Publication Date: 2019-09-10
- Inventor: Shuihe Cai
- Applicant: Aplus Microstructure Electronics Co., Ltd
- Applicant Address: CN Changzhou
- Assignee: APLUS SEMICONDUCTOR TECHNOLOGIES CO., LTD.
- Current Assignee: APLUS SEMICONDUCTOR TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Changzhou
- Agency: Wayne & Ken, LLC
- Agent Tony Hom
- Priority: CN201711197763 20171127
- Main IPC: H03K5/00
- IPC: H03K5/00 ; H03K3/03

Abstract:
The present utility model relates to an ultra-low voltage two-stage ring voltage-controlled oscillator applied to a chip circuit. The oscillator includes two-stage delay units. The oscillator includes two delay units that are connected end-to-end, and adjusts a working frequency by adjusting delay time of the delay unit. The delay unit includes PMOS transistors M1, M2, M3, and M4, NMOS transistors M5, M6, M7, and M8, and a load capacitor CL. The two-stage ring voltage-controlled oscillator of the present utility model uses a substrate feed forward bias structure, reduces a threshold voltage of a transistor, reduces a supply voltage, reduces power consumption, has a large tuning range, and is particularly suitable for a system that works at a low supply voltage.
Public/Granted literature
- US20190165772A1 ULTRA-LOW VOLTAGE TWO-STAGE RING VOLTAGE-CONTROLLED OSCILLATOR APPLIED TO CHIP CIRCUIT Public/Granted day:2019-05-30
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