Invention Grant
- Patent Title: Global shutter imaging pixels
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Application No.: US16182746Application Date: 2018-11-07
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Publication No.: US10412326B2Publication Date: 2019-09-10
- Inventor: Tomas Geurts , Thomas Cools
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent Joseph F. Guihan
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/3745 ; H04N5/378 ; H04N5/353 ; H04N5/374 ; H04N5/357

Abstract:
A global shutter imaging pixel may have a single source follower transistor. The source follower transistor may be coupled to a floating diffusion region and a charge storage region. In order to read out samples from the charge storage region without including a second source follower transistor in each pixel, the samples may be transferred to floating diffusion regions of adjacent pixels. Alternatively, a transistor may be configured to transfer charge from the charge storage region to the floating diffusion region of the same pixel, thus reusing a single source follower transistor. These types of pixels may be used for correlated double sampling, where a reset charge level and integration charge level are both sampled. These pixels may also operate in a global shutter mode where images are captured simultaneously by each pixel.
Public/Granted literature
- US20190075259A1 GLOBAL SHUTTER IMAGING PIXELS Public/Granted day:2019-03-07
Information query
IPC分类: