Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16182259Application Date: 2018-11-06
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Publication No.: US10416481B2Publication Date: 2019-09-17
- Inventor: Tohru Kawai , Shinichi Watanuki , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-245974 20171222
- Main IPC: G02F1/025
- IPC: G02F1/025

Abstract:
The performances of a semiconductor device are improved. The semiconductor device includes an insulation layer, an optical waveguide part formed over the insulation layer, and including a p type semiconductor region and an n type semiconductor region formed therein, and an interlayer insulation film formed over the insulation layer in such a manner as to cover the optical waveguide part. At the first portion of the optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the optical waveguide part, the n type semiconductor region is arranged at the central part of the optical waveguide part, and the p type semiconductor region is arranged in such a manner as to surround the entire circumference of the n type semiconductor region.
Public/Granted literature
- US20190196231A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-27
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