Invention Grant
- Patent Title: Positive resist composition, resist pattern forming process, and photomask blank
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Application No.: US15656203Application Date: 2017-07-21
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Publication No.: US10416558B2Publication Date: 2019-09-17
- Inventor: Keiichi Masunaga , Satoshi Watanabe , Masaaki Kotake , Masaki Ohashi
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2016-154628 20160805
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/004 ; G03F7/16 ; G03F7/38 ; G03F7/20 ; G03F7/32 ; C07C381/12 ; G03F1/76
Abstract:
A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
Public/Granted literature
- US20180039177A1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK Public/Granted day:2018-02-08
Information query
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