A film material includes a support film having a transmittance of at least 60% with respect to light of wavelength 300-450 nm, and a resin layer containing 0.001-10 wt % of a basic compound with a molecular weight of up to 10,000, and having a thickness of 1-100 μm. A pattern is formed by attaching the resin layer in the film material to a chemically amplified negative resist layer on a wafer, exposing, baking, and developing the resist layer. The profile of openings in the pattern is improved.