Write-through detection for a memory circuit with an analog bypass portion
Abstract:
The circuit includes a memory array arranged as rows and columns of memory cells. An array portion stores a respective memory word in a given one of the rows in response to a word-write signal corresponding to a write address of the given one of the rows and in response to a plurality of bit-write signals associated with the plurality of columns, and reads a respective memory word from a given one of the rows in response to a word-read signal corresponding to a read address of the given one of the rows and in response to a plurality of bit-read signals associated with the plurality of columns. The circuit also includes a write-through detection system that activates an analog bypass portion to read the memory word from the analog bypass portion in response to the read address being the same as the write address.
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