Memories may include a first bi-directional select device connected between a first access line and a second access line, and a plurality of memory cells, each memory cell of the plurality of memory cells connected between the second access line and a respective third access line of a plurality of third access lines. Each memory cell of the plurality of memory cells comprises a respective second bi-directional select device, of a plurality of second bi-directional select devices, and a respective programmable element, of a plurality of programmable elements, connected in series.