Invention Grant
- Patent Title: Semiconductor memory device for storing multivalued data
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Application No.: US16132208Application Date: 2018-09-14
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Publication No.: US10418117B2Publication Date: 2019-09-17
- Inventor: Noboru Shibata , Tomoharu Tanaka
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2002-347797 20021129; JP2003-402161 20031201
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/34 ; G11C11/56 ; G11C16/04 ; G11C16/10 ; G11C16/12

Abstract:
Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction.
Public/Granted literature
- US20190013082A1 SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTIVALUED DATA Public/Granted day:2019-01-10
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