Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US16095386Application Date: 2016-06-30
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Publication No.: US10418281B2Publication Date: 2019-09-17
- Inventor: Takuichiro Shitomi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/069375 WO 20160630
- International Announcement: WO2018/003048 WO 20180104
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L27/088
Abstract:
An object is to provide a technique for preventing an oxide film from being partly thin. A third oxide film is formed onto a nitride film in a first area; in addition, a fourth oxide film is formed onto a main surface in a second area. The third oxide film, the nitride film, and a first oxide film are removed from the first area using a mask. After the third oxide film, the nitride film, and the first oxide film are removed, a fifth oxide film is formed onto the main surface in the first area. The fifth oxide film is removed from the first area using a mask. After the fifth oxide film is removed, a sixth oxide film is formed onto the main surface in the first area.
Public/Granted literature
- US20190131174A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-05-02
Information query
IPC分类:
