Invention Grant
- Patent Title: Manufacturing method of semiconductor device, inspection device of semiconductor device, and semiconductor device
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Application No.: US15892841Application Date: 2018-02-09
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Publication No.: US10418292B2Publication Date: 2019-09-17
- Inventor: Yu Muto
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-061258 20170327
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/48 ; H01L23/498 ; G01R1/04 ; G01R31/04 ; H01L23/00 ; G01R27/20

Abstract:
A subject matter of this invention is that a manufacturing yield of a semiconductor device is improved.A resistance value between a pogo pin and a test pin is measured by bringing a plurality of pogo pins of a socket mounted over a test board included in an inspection device of a semiconductor device into contact with a plurality of solder balls, respectively, and bringing the test pin provided in the socket into contact with a first solder ball of a plurality of solder balls at a position different from a position where the pogo pin is brought into contact with the first solder ball. Thereby, a coupling failure between the pogo pin and the first solder ball is detected, so that a conductive state is inspected.
Public/Granted literature
Information query
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