Invention Grant
- Patent Title: Method for making a photolithography mask intended for the formation of contacts, mask and integrated circuit corresponding thereto
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Application No.: US14956903Application Date: 2015-12-02
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Publication No.: US10418322B2Publication Date: 2019-09-17
- Inventor: Guilhem Bouton , Patrick Regnier
- Applicant: STMICROELECTRONICS (ROUSSET) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed Intellectual Property Law Group LLP
- Priority: FR1352894 20130329
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L21/033 ; H01L23/522 ; H01L21/311 ; G03F1/50 ; H01L23/00 ; G03F1/38
Abstract:
A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold.
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